? semiconductor components industries, llc, 2011 december, 2011 ? rev. 1 1 publication order number: ngb8207an/d ngb8207an, ngb8207abn ignition igbt 20 a, 365 v, n ? channel d 2 pak this logic level insulated gate bipolar transistor (igbt) features monolithic circuitry integrating esd and overvoltage clamped protection for use in inductive coil drivers applications. primary uses include ignition, direct fuel injection, or wherever high voltage and high current switching is required. features ? ideal for coil ? on ? plug and driver ? on ? coil applications ? gate ? emitter esd protection ? temperature compensated gate ? collector voltage clamp limits stress applied to load ? integrated esd diode protection ? low threshold voltage for interfacing power loads to logic or microprocessor devices ? low saturation voltage ? high pulsed current capability ? minimum avalanche energy ? 500 mj ? gate resistor (r g ) = 70 ? this is a pb ? free device applications ? ignition systems maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collector ? emitter voltage v ces 365 v gate ? emitter voltage v ge 15 v collector current ? continuous @ t c = 25 c ? pulsed i c 20 50 a dc a ac continuous gate current i g 1.0 ma transient gate current (t 2 ms, f 100 hz) i g 20 ma esd (charged ? device model) esd 2.0 kv esd (human body model) r = 1500 , c = 100 pf esd 8.0 kv esd (machine model) r = 0 , c = 200 pf esd 500 v total power dissipation @ t c = 25 c derate above 25 c (note 1) p d 165 1.1 w w/ c operating & storage temperature range t j , t stg ? 55 to +175 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. assuming infinite heatsink case ? to ? ambient 20 amps, 365 volts v ce(on) = 1.75 v typ @ i c = 10 a, v ge 4.5 v c e g r g r ge http://onsemi.com device package shipping ? ordering information ngb8207ant4g d 2 pak (pb ? free) 800 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. d 2 pak case 418b style 4 marking diagram ngb 8207axg ayww 1 gate 3 emitter 4 collector 2 collector ngb8207ax = device code x = n or b a = assembly location y = year ww = work week g = pb ? free package 1 NGB8207ABNT4G d 2 pak (pb ? free) 800 / tape & reel
ngb8207an, ngb8207abn http://onsemi.com 2 unclamped collector ? to ? emitter avalanche characteristics ( ? 40 t j 150 c) characteristic symbol value unit single pulse collector ? to ? emitter avalanche energy v cc = 50 v, v ge = 10 v, pk i l = 16.5 a, l = 3.7 mh, r g = 1 k starting t j = 25 c v cc = 50 v, v ge = 10 v, pk i l = 10 a, l = 6.1 mh, r g = 1 k starting t j = 125 c e as 500 306 mj reverse avalanche energy v cc = 100 v, v ge = 20 v, pk i l = 25.8 a, l = 6.0 mh, starting t j = 25 c e as(r) 2000 mj thermal characteristics thermal resistance, junction ? to ? case r jc 0.9 c/w thermal resistance, junction ? to ? ambient (note 2) r ja 50 c/w maximum temperature for soldering purposes, 0.125 in from case for 5 seconds (note 3) t l 275 c 2. when surface mounted to an fr4 board using the minimum recommended pad size. 3. for further details, see soldering and mounting techniques reference manual: solderrm/d. electrical characteristics characteristic symbol test conditions temperature min typ max unit off characteristics collector ? emitter clamp voltage bv ces i c = 2.0 ma t j = ? 40 c to 150 c 325 350 375 v i c = 10 ma t j = ? 40 c to 150 c 340 365 390 zero gate voltage collector current i ces v ce = 24 v v ge = 0 v t j = 25 c 0.1 2.0 a v ce = 250 v v ge = 0 v t j = 25 c ? 1.0 5 t j = 150 c ? 10 125 t j = ? 40 c ? 0.25 2.5 reverse collector ? emitter clamp voltage b vces(r) i c = ? 75 ma t j = 25 c 25 27 29 v t j = 150 c 25 29 31 t j = ? 40 c 24 26 29 reverse collector ? emitter leakage current i ces(r) v ce = ? 24 v t j = 25 c ? 0.5 1.1 ma t j = 150 c 20 25 40 t j = ? 40 c ? 0.03 1.0 gate ? emitter clamp voltage bv ges i g = 5.0 ma t j = ? 40 c to 150 c 12 13 14.5 v gate ? emitter leakage current i ges v ge = 10 v t j = ? 40 c to 150 c 500 700 1000 a gate resistor r g t j = ? 40 c to 150 c 70 gate ? emitter resistor r ge t j = ? 40 c to 150 c 14.25 16 25 k on characteristics (note 4) gate threshold voltage v ge(th) i c = 1.0 ma v ge = v ce t j = 25 c 1.2 1.5 2.0 v t j = 150 c 0.7 1.0 1.3 t j = ? 40 c 1.4 1.7 2.0 threshold temperature coefficient (negative) ? 4.0 ? mv/ c collector ? to ? emitter on ? voltage v ce(on) i c = 6.0 a v ge = 4.0 v t j = 25 c 1.15 1.5 1.75 v t j = 150 c 1.2 1.4 1.75 t j = ? 40 c 1.2 1.6 1.75 i c = 10 ma v ge = 4.5 v t j = 25 c ? 0.62 1.0 *maximum value of characteristic across temperature range. 4. pulse test: pulse width 300 s, duty cycle 2%.
ngb8207an, ngb8207abn http://onsemi.com 3 electrical characteristics characteristic unit max typ min temperature test conditions symbol on characteristics (note 4) collector ? to ? emitter on ? voltage v ce(on) i c = 8.0 a v ge = 4.0 v t j = 25 c 1.2 1.65 2.0 v t j = 150 c 1.4 1.6 2.0 t j = ? 40 c 1.4 1.7 2.0 i c = 10 a v ge = 3.7 v t j = 25 c 1.35 1.8 2.2 t j = 150 c 1.5 1.9 2.2 t j = ? 40 c 1.5 1.85 2.2 i c = 10 a v ge = 4.0 v t j = 25 c 1.35 1.8 2.1 t j = 150 c 1.5 1.8 2.1 t j = ? 40 c 1.5 1.8 2.1 i c = 10 a v ge = 4.5 v t j = 25 c 1.35 1.75 2.05 t j = 150 c 1.4 1.75 2.1 t j = ? 40 c 1.4 1.8 2.1 forward transconductance gfs i c = 6.0 a v ce = 5.0 v t j = 25 c ? 15.8 ? mhos dynamic characteristics input capacitance c iss f = 10 khz v ce = 25 v t j = 25 c 750 810 900 pf output capacitance c oss 75 90 105 transfer capacitance c rss 4 7 12 switching characteristics turn ? on delay time (resistive) low voltage t d(on) v ce = 14 v r l = 1.0 v ge = 5.0 v r g = 1000 t j = 25 c 0.5 0.55 0.7 sec rise time (resistive) low voltage t r t j = 25 c 2.0 2.32 2.7 turn ? off delay time (resistive) low voltage t d(off) v ce = 14 v r l = 1.0 v ge = 5.0 v r g = 1000 t j = 25 c 2.0 2.5 3.0 fall time (resistive) low voltage t f t j = 25 c 8.0 10 13 turn ? on delay time (resistive) high voltage t d(on) v ce = 300 v r l = 46 v ge = 5.0 v r g = 1000 t j = 25 c 0.5 0.65 0.75 rise time (resistive) high voltage t r t j = 25 c 0.7 1.8 2.0 turn ? off delay time (resistive) high voltage t d(off) v ce = 300 v r l = 46 v ge = 5.0 v r g = 1000 t j = 25 c 4.0 4.7 6.0 fall time (resistive) high voltage t f t j = 25 c 6.0 10 15 *maximum value of characteristic across temperature range. 4. pulse test: pulse width 300 s, duty cycle 2%.
ngb8207an, ngb8207abn http://onsemi.com 4 typical electrical characteristics figure 1. typical self clamped inductive switching performance (scis) figure 2. typical self clamped inductive switching performance (scis) l (mh) 20 090 5 10 0 15 100 i scis (a) clamping time ( s) 0 10 20 5 15 0 25 i scis (a) i c , collector current (a) v ce(on) , collector ? to ? emitter voltage (v) 810 6 412 214 1.25 2.25 1.75 0.75 2.75 16 t j = ? 40 c ? 40 100 40 0 180 ? 20 20 60 120 t j , junction temperature ( c) i c = 20 a 35 10 t j = 25 c t j = 175 c 18 20 140 i c = 16 a i c = 10 a i c = 8.0 a i c = 6.0 a 30 40 20 figure 3. collector ? to ? emitter voltage vs. collector current figure 4. collector ? to ? emitter voltage vs. junction temperature 25 30 30 35 150 c 80 70 60 50 25 c 900 1200 100 300 400 200 150 c 800 700 600 500 25 c 10001100 v ge = 4.0 v 1.0 2.0 1.5 2.5 v ce(on) , collector ? to ? emitter voltage (v) 1.25 2.25 1.75 2.75 2.0 1.5 2.5 80 160 v ge = 4.0 v v ge = 6.0 v 4.5 v v ge = 6.0 v v ge = 2.5 v figure 5. on ? region characteristics @ t j = 25 c figure 6. on ? region characteristics @ t j = ? 40 c 40 10 2 i c, collector current (a) 0 60 20 30 50 10 1357 v ce , collector ? to ? emitter voltage (v) 5.0 v 06 489 40 10 2 i c, collector current (a) 0 60 20 30 50 10 1357 v ce , collector ? to ? emitter voltage (v) 5.0 v 06 489 v ge = 3.0 v v ge = 3.5 v v ge = 4.0 v v ge = 4.5 v v ge = 2.5 v v ge = 3.0 v v ge = 3.5 v v ge = 4.0 v
ngb8207an, ngb8207abn http://onsemi.com 5 typical electrical characteristics 6.0 v 5.0 v t j , junction temperature ( c) leakage current ( a) 100 0.1 10,000 1000 60 40 30 20 0 figure 7. on ? region characteristics @ t j = 175 c figure 8. transfer characteristics figure 9. collector ? to ? emitter leakage current vs. junction temperature figure 10. gate threshold voltage vs. temperature v ge , gate ? to ? emitter voltage (v) i c , collector current (a) 3.0 2.0 5.0 1.5 4.0 10 1 10 2.0 1.75 1.25 1.0 0.5 t j , junction temperature ( c) v ge(th) , gate threshold voltage (v) 0.75 1.0 v ce 5.0 v 50 3.5 v v ge = 2.5 v 40 10 2 i c, collector current (a) 0 60 20 30 50 10 1357 v ce , collector ? to ? emitter voltage (v) 06 489 t j = 175 c t j = 25 c t j = ? 40 c v ce = ? 24 v v ce = 320 v 1.5 i c = 1 ma, v ce = v ge 4.5 v 4.0 v 3.0 v 2.5 3.5 4.5 ? 40 100 40 0 180 ? 20 20 60 120 140 80 160 v ce = 250 v ? 40 100 40 0 180 ? 20 20 60 120 140 80 160 1 0.1 10 figure 11. capacitance variation figure 12. resistive switching time variation vs. temperature temperature ( c) t, time ( s) 60 85 ? 15 110 185 160 135 100 10 1 1000 10,000 collector ? to ? emitter voltage (v) c, capacitance (pf) 40 20 100 200 140 0 120 t j = 25 c v ge = 0 v t d(on) v cc = 14 v v ge = 5.0 v r l = 1.0 r g = 1 k 80 60 160 180 c iss c oss c rss t d(off) t f t r 35 10 ? 40
ngb8207an, ngb8207abn http://onsemi.com 6 typical electrical characteristics dc 10 ms 1 ms 100 s 10 s v ge = 4.0 v single pulse t c = 25 c 100 10 1 figure 13. forward biased safe operating area v ce , collector ? emitter voltage (v) i c , collector current (a) 1 10 1000 100 0.1 v ce(on) limit thermal limit package limit mounted on 2 sq. fr4 board (1 sq. 2 oz. cu 0.06 thick single sided) 0.000001 0.001 0.0001 0.1 1 0.01 0.01 t,time (s) r jc (t), transient thermal resistance ( c/w) 1 0.1 figure 14. best case transient thermal resistance (non ? normalized junction ? to ? case mounted on cold plate) 0.00001 p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r jc (t) 0.2 single pulse 0.1 0.05 0.02 0.01 duty cycle = 0.5
ngb8207an, ngb8207abn http://onsemi.com 7 package dimensions seating plane s g d ? t ? m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 ? b ? m b style 4: pin 1. gate 2. collector 3. emitter 4. collector w w notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 418b ? 01 thru 418b ? 03 obsolete, new standard 418b ? 04. f 0.310 0.350 7.87 8.89 l 0.052 0.072 1.32 1.83 m 0.280 0.320 7.11 8.13 n 0.197 ref 5.00 ref p 0.079 ref 2.00 ref r 0.039 ref 0.99 ref m l f p u view w ? w d 2 pak 3 case 418b ? 04 issue j *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 8.38 0.33 1.016 0.04 17.02 0.67 10.66 0.42 3.05 0.12 5.08 0.20 mm inches scale 3:1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. ngb8207an/d publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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